Publications

Sara Bakhshi, Ngwe Zin, Kristopher O Davis, Marshall Wilson, Ismail Kashkoush, Winston V Schoenfeld

aluminium compounds, aluminum oxide, carrier lifetime, passivation, photovoltaic cells, Silicon (Si), Silicon Nitride, surface passivation

Dmitriy Marinskiy, Patrick Polakowski, Piotr Edelman, Marshall Wilson, Jacek Lagowski, Joachim Metzger, Robert Binder, Johannes Müller

corona - Kelvin, noncontact metrology, surface voltage, THIN FILM CHARACTERIZATION, ferroelectric, HfO2

Marshall Wilson, Andrew Findlay, Alexandre Savtchouk, John D'Amico, Robert Hillard, Fumimasa Horikiri, Jacek Lagowski

corona - Kelvin, dielectric characterization, Doping measurements, full wafer mapping, Non-Contact Measurement, silicon carbide (SiC)

Haider Ali, Anamaria Moldovan, Sebastian Mack, Marshall Wilson, Winston V Schoenfeld, Kristopher O Davis

aluminum oxide, cleaning technology, passivated surface, photovoltaics, Silicon (Si), Silicon Nitride

Dmitriy Marinskiy, Patrick Polakowski, Jacek Lagowski, Marshall Wilson, Piotr Edelman, Johannes Müller

corona - Kelvin, Non-Contact Measurement, THIN FILM CHARACTERIZATION

Sagnik Chakraborty, Marshall Wilson, Maria Luz Manalo, Abhay Sarda, Johnson Wong, Romika Sharma, Armin G Aberle, Joel B Li

boron, diffusion, phosphorus, Silicon, multicrystalline silicon, diffusion gettering

R. Duru, D. Le-Cunff, M. Cannac, N. Laurent, L. Dudas, Z.T. Kiss, D. Cseh, I. Lajtos, F. Jay, Gy. Nadudvari

photoluminescence, dislocations, buried defects, non-visual defects

L. Kócs, E. Albert, B. Tegze, M. Kabai-Faix,Cs. Major, A. Szalai, P. Basa, Z. Hórvölgyi

ELLIPSOMETRIC POROSIMETRY, sol-gel coating, improved light transmittance, long-term optical stability, network strengthening, porosity

E. Ochoa-Martínez, L. Barrutia, M. Ochoa, E. Barrigón, I. García, I. Rey-Stolle, C. Algora, P. Basa, G. Kronome, M. Gabás

refractive index, n-type, p-type, doped GaInP, AlInP, AlGaInP, multijunction solar cells

J. Borland, M. Sugitani, S.S. Chaung, Y.J. Lee, K. Huet, A. Joshi, A. Wan, L. Wong, P. Horvath, A. Finley

Surface Strained Ge-Cz Wafers By Sn-Implantation For High Electron And Hole Mobility

Homogeneous Transparent Conductive ZnO:Ga by ALD for Large LED Wafers

GZO; Atomic layer deposition; TCO; Rapid thermal annealing; LED

O. Mhibik, S. Ch´enais, S. Forget, Ch. Defranoux, S. Sanaur

vertically-emitting solid-state organic lasers (VECSOLs); inkjet printing; new host polymer matrix for standard laser dyes; Tunable laser

Alexander Savtchouk, Marshall Wilson, Jacek Lagowski, Andor Czett, Csaba Buday

corona charge, Non-contact, silicon carbide (SiC), surface dopant density

A Findlay, J Lagowski, M Wilson, A Savtchouk, B Hillard

doping, mercury probe, non-contact electrical metrology, Non-Contact Measurement, silicon carbide (SiC), silicon compounds, Surface charge, AlGaN, GaN

Andrew David Findlay, Dmitriy Marinskiy, Piotr Edelman, Marshall Wilson, Alexandre Savtchouk, Carlos Almeida, Jacek Lagowski

Non-Contact Measurement, silicon carbide (SiC), surface voltage, wafer mapping, non-visual defects

C. Robertson, A. W. Lodge, P. Basa, M. Carravetta, A. L. Hector, R. J. Kashtiban, J. Sloan, D. C. Smith, J. Spencer, A. Walcarius

ELLIPSOMETRIC POROSIMETRY, Mesoporous silica films, Vertically aligned hexagonal pores, Electrochemically assisted surfactant assembly (EASA), Porosimetry

G. Yuan, Ch. Hua, L. Huang, Ch. Defranoux, P. Basa, Y. Liu, Ch. Song, G. Han

spectroscopic ellipsometry, WO3, Electrochromic film, Coloration process

Marshall Wilson, Andrew Findlay, John D'Amico, Alexandre Savtchouk, Jacek Lagowski

carrier lifetime, corona charge, Corona – Kelvin method, Non-Contact Measurement, passivation, silicon compounds, solar cells, surface recombination

Marshall Wilson, Alexandre Savtchouk, Piotr Edelman, Dmitriy Marinskiy, Jacek Lagowski

Characterisation, full wafer mapping, Kelvin probe, Silicon Nitride, solar cells

Andrew Findlay, Dmitriy Marinskiy, Piotr Edelman, Marshall Wilson, Alexandre Savtchouk, Jacek Lagowski

Non-Contact Measurement, silicon carbide (SiC), surface voltage, wafer mapping, non-visual defects

E. Albert, P. Basa, A. Deák, A. Németh, Z. Osváth, G. Sáfrán, Z. Zolnai, Z. Hórvölgyi, N. Nagy

artificial surface morphologies, hexagonally ordered silica spheres, ion irradiation, multilayer, nanopatterning process, porous silica coatings, sub-micron scale, ELLIPSOMETRIC POROSIMETRY

C. Talagrand, X. Boddaert, D.G. Selmeczi, C. Defranoux, P. Collot

InGaZnO, spectroscopic ellipsometry, Dielectric function, Process deposition, Amorphous semiconductor

E. Albert, P.A. Albouy, A. Ayral, P. Basa, G. Csík, N. Nagy, S. Roualdès, V. Rouessac, G. Sáfrán, Á. Suhajda, Z. Zolnai, Z. Hórvölgyi

of long-term antibacterial activity, silver doped titania coatings, titania layer structure, ELLIPSOMETRIC POROSIMETRY, sol-gel coating

Y. Ma, Y. Gu, Y. Zhang, X. Chen, S. Xi, Z. Boldizsár, L. Huang, L. Zhou

Carrier scattering, relaxation dynamics, In0.83Ga0.17As

M. Wilson, A. Savtchouk, A. Findlay, J. Lagowski, P. Edelman, D. Marinskiy, J. D’Amico, F. Korsós, N. Orsós, M. Cs. Varga

Defect Mapping, lifetime, silicon carbide (SiC), Triangular Defect

Shubham Duttagupta, Fen Lin, Marshall Wilson, Matthew B Boreland, Bram Hoex, Armin G Aberle

corona-voltage metrology, Non-Contact Measurement, photovoltaics, silicon defect density, Silicon Nitride, surface passivation, surface recombination velocity

K. Wang, B. Cheng, B. Wu, C. Defranoux, P. Basa, C. Song, G. Han, Y. Liu

spectroscopic ellipsometry, Fluorinated tin oxide, Low emissivity, annealing

J. Budai, B. Farkas, Z.L. Horváth, Zs. Geretovszky

ellipsometry, modelling, Artifact minimization, Numerical inversion

D. Le Cunff, T. Nguyen, R. Duru, F. Abbate, J. Hoglund, N. Laurent, F. Pernot, M. Wormington

Ge-Si alloys, boron, elemental semiconductors, semiconductor doping, semiconductor epitaxial layers

T.E. Kagalwala, B.M. Erwin, V.L. Calero-DdelC, Y.M. Brovman, J. Hoglund

chip scale packaging, flip-chip devices, passivation, process monitoring, reflectometry

D. Marinskiy, A. Savtchouk

corona - Kelvin, silicon carbide (SiC), doping

D. Marinskiy, T.C. Loy, H.C. Yeh, M. Wilson, J. Lagowski

Corona-Kelvin Metrology, high-k dielectrics, capacitance equivalent thickness, corona discharge

D. Marinskiy, J. Lagowski, M. Wilson, A. Findlay, C. Almeida, P. Edelman

surface voltage, defect inspection, Kelvin probe

J. D’Amico, A. Savtchouk, M. Wilson, J. Lagowski, W. Wang, T. Kim, G. Bersuker, D. Veksler, D. Koh

corona charge, dielectric characterization, non-contact C-V, non-contact I-V

M. Wilson, A. Findlay, J. D'Amico, A. Savtchouk, J. Lagowski, Z. Xu, R. Yang, T. Guo

aluminium compounds, elemental semiconductors, interface states, passivation, Silicon (Si), silicon compounds, solar cells, space charge, surface recombination

M. Wilson, Z. Hameiri, N. Nandakumar, S. Duttagupta

alumincorona, dielectric materials, passivation, silicon compounds, solar cells, surface texture

A. Findlay, J. Lagowski, M. Wilson, J. D'Amico, A. Savtchouk, F. Korsós, G. Nádudvari

corona charge, Microwave, Passivation Defects, photoconductive decay, Photoluminescence Imaging, Quasisteady State

F. Korsós, A. Jász

Microwave Photoconductive Decay (μ-PCD), photoconductive decay, surface recombination

G. Paráda, F. Korsós, P. Tüttő

carrier lifetime, Monocrystalline, Ingot

F. Heider, J. Baumgartl, P. Horváth, T. Jaehrling

air gaps, capacitance measurement, doping profile, Electrical resistivity, epitaxial layer, Silicon (Si), voltage measurement

A. Czett, Cs. Buday, S. Savtchouk, D. Marinskiy

silicon carbide (SiC), corona-Kelvin measurement, mercury probe, doping profile

J. Höglund, Z. Kiss, G. Nádudvari, Zs. Kovács, Sz. Velkei, C. Moore, V. Vartanian, R.A. Allen

infrared, microscopy, optical inspection, optical systems

M. Krishtab, G. Pourtois, K. Vanstreels, H. Gliemann, M. Tsotsalas, C. Wöll, R. Hillard, M. Tallian, S. De Gendt, M. Baklanov

Dielectric properties of SURMOF HKUST-1 films

Y.J. Jee, C.Y. Kim, C.S. Jun, T.S. Kim, A. Belyaev, D. Marinskiy

Residual implant damage, Generation lifetime, Breakdown voltage, Doping measurements, surface photovoltage, Corona – Kelvin method

D. Marinskiy, P. Edelman, A.D. Snider

Kelvin force microscopy, corona charge, concentration profile, surface diffusion

K.O. Davis, K. Jiang, M. Wilson, C. Demberger, H. Zunft, H. Haverkamp, D. Habermann, W.V. Schoenfeld

atmospheric pressure CVD, Silicon (Si), passivation, aluminum oxide

M. Wilson, A. Findlay, J. Lagowski, J. D’Amico, A. Savtchouk

passivation dielectric, interface trap density, PID susceptibility

A. Savtchouk, M. Wilson, J. Lagowski, J. D’Amico, A. Findlay, P. Edelman

Corona-Kelvin Metrology, surface passivation, surface recombination

J. D'Amico, M. Wilson, C. Almeida, J. Lagowski, S. Olibet

Characterisation, Interface, passivation, recombination, Silicon Nitride

M. Wilson, A. Savthouck, J. D'Amico, J. Lagowski, S. Schmitt, A. Schneider, S. Olibet

deep levels, defect states, Dielectric thin films, infrared spectra, leakage currents, photoconductivity, photoionisation, refractive index, silicon compounds, stoichiometry, visible spectra

J. Govaerts, S.N. Granata, T. Bearda, F. Dross, C. Boulord, G. Beaucarne, F. Korsós, K. Baert, I. Gordon, J. Poortmans

PECVD, Heterojunction, Silicone bonding, Module-level processing

M. Wilson, J. Lagowski, P. Edelman, F. Korsós, G. Nádudvari, Z. Kiss, J. Schmauder, V. Mihailetchi, S. Olibet

photoluminescence, emitter saturation current, lifetime

H.S. Radhakrishnan, M. Debucquoy, F. Korsós, K. Van Nieuwenhuysen, V. Depauw, I. Gordon, R. Mertens, J. Poortmans

epilayer, bulk lifetime, porous silicon, surface recombination velocity, Microwave Photoconductive Decay (μ-PCD), QSSPC, PL, PC1D

F. Korsós, A. Zsóvár, J. Lagowski, M. Wilson, Z. Kiss, Z. Kovács, G. Nádudvari

elemental semiconductors, photoluminescence, Silicon (Si)

F. Korsós, Z. Kiss, G. Nádudvari, A. Zsovár, M. Wilson, P. Edelman, J. Lagowski, J. Chen, L. Zhao, C. Zhou, W. Wang, B. Wang

surface passivation, PL imaging, QSS-μPCD

Z. Tóth, A. Gárdián, M. Füle, J. Csontos, F. Korsós, P. Basa

Laser Processing, Silicon (Si), Texturisation

Zs.J. Horváth, P. Basa, T. Jászi, K.Z. Molnár, A.E. Pap, Gy. Molnár

A.A. Khosroabadi, P. Gangopadhyay, B. Cocilovo, L. Makai, P. Basa, B. Duong, J. Thomas, and R.A. Norwood

spectroscopic ellipsometry

S. Duttagupta, Fen Lin, K.D. Shetty, M. Wilson, Fa-Jun Ma, Jiaji Lin, A.G. Aberle, B. Hoex

aluminium compounds, current density, elemental semiconductors, passivation, plasma CVD, short-circuit currents, Silicon (Si), silicon compounds, solar cells

M. Wilson, P. Edelman, J. Lagowski, S. Olibet, V. Mihailetchi

Microwave Photoconductive Decay (μ-PCD), Steady-state lifetime, emitter saturation current

M. Wilson, J. Lagowski, P. Edelman, A. Savtchouk, A. Findlay, S. Olibet, V. Mihailetchi

elemental semiconductors, reliability, Silicon (Si), solar cells

M. Wilson, A. Savtchouk, F. Korsós, G. Paráda, K. Kis-Szabo, V.D. Mihailetchi, S. Olibet

lifetime, passivation, field-effect

F. Korsós, J. Csontos, Z. Kiss, G. Nádudvari, P. Tüttő, Z. Tóth, M. Wilson

Wafer-Based Silicon Solar Cells, Microwave Photoconductive Decay (μ-PCD), Photoluminescence Imaging

G. Szitási, F. Korsós, D. Selmeczi, O. Takács, F. Novinics, P. Tüttő, A. Findlay, M. Wilson

eddy current testing, ellipsometry, fluorine, photoconducting materials, photovoltaic effects, spectroscopy, tin compounds

A.R. Peaker, V.P. Markevich, B. Hamilton, G. Parada, A. Dudás, A. Pap, E. Don, B. Lim, J. Schmidt, L. Yu, Y. Yoon, G. Rozgonyi

Laplace deep level transient spectroscopy, minority carrier lifetime, passivation, recombination, silicon solar cells, transition metals

Zs. J. Horváth, K. Zs. Molnár, Gy. Molnár, P. Basa, T. Jászi, A. E. Pap, R. Lovassy, P. Turmezei

MNOS structures, Ge nanocrytals, Oxide thickness

J-L. Everaert, E. Rosseel, A. Mészáros, K. Kis-Szabó, P. Tüttő, A. Pap, T. Pavelka, M. Wilson, A. Findlay, P. Edelman, J. Lagowski

noncontact method, mobility measurement, corona-voltage metrology, ac-surface photovoltage measurement, inversion layer sheet resistance

M. Tallián, A. Pap, K. Mocsár, A. Somogyi, G. Nádudvari, D. Kosztka, T. Pavelka

ultra-shallow junction (USJ), extremely low ion implant energies, Photomodulated Reflection measurements

M. Tallián, A. Pap, K. Mocsár, A. Somogyi, Gy. Nádudvari, D. Kosztka, T. Pavelka

ultra-shallow junction (USJ), Photomodulated Reflection measurements

K. Peter, P. Preis, P.E. Díaz-Pérez, J. Theobald, E. Enebakk, A.-K. Soiland, A. Savtchouk, M. Wilson

Solar Grade Silicon, Light Induced Degradation (LID)

J. Arumughan, J. Theobald, M. Wilson, L. Hildebrand, R. Petres, A. Savtchouk, R. Kopecek

c-Si, Degradation, Diffusion Length, lifetime

M. Wilson, A. Savtchouk, F. Buchholz, S. Olibet, R. Kopecek, K. Peter

Minority Carrier Diffusion Length, surface photovoltage, Incoming Wafers

M.Wilson, A. Savtchouk, J. Lagowski, F. Korsós, A. Tóth, R. Kopecek, V.D. Mihailetchic, R. Petres, T. Boescke

emitter passivation, field-effect, J0, corona charge

M. Wilson, A. Savtchouk, J. Lagowskia, K. Kis-Szabó, F. Korsós, A. Tóth, R. Kopecek, V.D. Mihailetchi

Microwave Photoconductive Decay (μ-PCD), J0, photovoltaics, lifetime

M. Wilson, J. Lagowski, A. Savtchouk, A. Findlay, L. Jastrzebski, S. Olibet, V.D. Mihailetchi

charge injection, corona, electron-hole recombination, interface states, passivation, solar cells, thin films, tunneling

F. Korsós, G. Paráda, D. Fátay

Wafer-Based Silicon Solar Cells, Silicon Feedstock, Crystallisation, Wafering, Microwave Photoconductive Decay (μ-PCD), carrier lifetime

M. Wilson, J. D'Amico, A. Savtchouk, P. Edelman, A. Findlay, L. Jastrzebski, J. Lagowski, K. Kis-Szabó, F. Korsós, A. Tóth, A. Pap, R. Kopecek, K. Peter

electron traps, passivation, photovoltaic cells, semiconductor thin films, Silicon (Si)

K. Peter, R. Kopecek, M. Wilson, J. Lagowski, E. Enebakk, A. Soiland, S. Grandum

Crystallisation, elemental semiconductors, solar cells

M. Wilson, P. Edelman, A. Savtchouk, J. D’Amico, A. Findlay, J. Lagowski

Silicon (Si), photovoltage, contamination, PV, defects, boron–oxygen dimer, full wafer mapping, light degradation, solar cells

E. Rosseel, A. Hikavyy, J-L. Everaert, L. Witters, J. Mitard, T. Hoffmann, W. Vandervorst, A. Pap, T. Pavelka

Ge-Si alloys, X-ray diffraction, elemental semiconductors, laser beam annealing, semiconductor epitaxial layers, semiconductor junctions, Silicon (Si)

J-L. Everaert, E. Rosseel, J. Dekoster, A. Pap, A. Mészáros, K. Kis-Szabó, T. Pavelka

Dielectrics, Carrier mobility, Charge carriers, Dielectric thin films, Metrology

Kwame N Eason, Rinji Sugino, Amir Jafarpour, Bingbing Zhang, Duncan Rogers, Robert Ogle, John D'amico, Marshall Wilson

Silicon Nitride

T. Pavelka, Á. Pap, P. Kenesei, M. Varga, F. Novinics, M. Tallián, G. Borionetti, G. Guaglio, M. Pfeffer, E. Don

Microwave Photoconductive Decay (μ-PCD), C-PCD, corona charge, carrier lifetime

J. D’Amico, A. Savtchouk, M. Wilson, C.H. Kim, H.W. Yoo, C.H. Lee, T.K. Kim, S.H. Son

Copper (Cu), Surface Lifetime, surface photovoltage, Surface Contamination, Metrology, in-line monitoring, elemental semiconductors, Inductively coupled plasma, Integrated circuits

N. Pic, G. Polisski, E. Paire, V. Rizzo, C. Grosjean, B. Bortolotti, J. D'Amico, N. Cabuil

oxynitrides, interface trapped charge, in-line monitoring, XPS, D-SIMS, RTP, Charge coupled devices, Ellipsometers, Nitridation, Surface charge, Surface oxidation

P. M. Nagy, P. Horvath, G. Peto, E. Kalman

Atomic Force Microscope (AFM), Ion Implantation, nanoindentation, Phase Transformation of Si, Pile-Up, Pop-In, Surface Modification

R.J. Hillard, C. Win Ye, M.C. Benjamin, K. Suguro

probes, Electrical resistance measurement, Testing, Solid state circuits, MOSFETs, annealing, Shape, Contacts, Capacitance-voltage characteristics, Charge carrier density

Anton Belyaev, Marshall Wilson, Jacek Lagowski, Lubek Jastrzebski, Andrew Findlay, J Price, CS Park, Muhammad M Hussain, G Bersuker, PS Lysaght

Corona-Kelvin Metrology, Dielectrics, Non-Contact Measurement

J-L. Everaert, E. Rosseel, C. Ortolland, M. Aoulaiche, T. Hoffmann, T. Pavelka, E. Don

corona charge, in-line, traps

F. Torregrosa, H. Etienne, G. Sempere, G. Mathieu, L. Roux, C. Grosjean, R. Daineche, Y. De Puydt, L. Dupuy, P. Galand, A. Pap, K. Kis-Szabo, T. Pavelka

ultra-shallow junction (USJ)

F. Torregrosa, H. Etienne, G. Sempere, G. Mathieu, L. Roux, V. Vervisch, P. Delaporte, T. Sarnet, A. Pap, K. Kis‐Szabó, T. Pavelka, C. Grosjean

plasma ion implantation, Ion Implantation, semiconductor junctions, annealing, boron

H. Etienne, F. Torregrosa, G. Semoere, G. Mathieu, L. Roux, F. Cristiano, P. Fazzini, W. Lerch, S. Paul, J. Gelpey, F. Milesi, F. Gonzatti, A. Pap, K. Kis-Szabo, T. Pavelka

amorphization, co-implantation, ultra-shallow junction (USJ), Hall effect measurements, SIMS, TEM

F. Korsós, K. Kis-Szabó, E. Don, A. Pap, T. Pavelka, C. Laviron, M. Pfeffer

Metrology, annealing, Ion Implantation, active layer, doping

P.M. Nagy, D. Aranyi, P. Horváth, G. Pető, E. Kálmán

nanoindentation, Ion Implantation, mechanical properties, AFM

E. Tsidilkovski, K. Steeples

Surface, photovoltage, Electronic properties, Strain, Multi-layer structure, Semiconductors, Characterisation

M. Wilson, A. Savtchouk, I. Tarasov, J. D’Amico, P. Edelman, N. Kochey, J. Lagowski

Minority Carrier Diffusion Length, surface photovoltage, iron detection in silicon wafers

P. Edelman, M. Wilson, J. D’Amico, A. Savtchouk, J. Lagowski

non-contact electrical metrology, Silicon (Si), mixed dielectrics, oxynitrides, hafnium silicates

E. Don, C. Kohn, A. Pap, P. Tüttő, T. Pavelka, C. Laviron, C. Wyon, R. Oechsner, M. Pfeffer

R.J. Hillard, M. Benjamin, J.O. Borland

R.J. Hillard, C. Win Ye, M.C. Benjamin, K. Suguro

doping profile, probes, semiconductor junctions