SRP-2100 / SRP-2100i Spreading Resistance Profiling

• Process control: Advanced process monitoring and tuning in semiconductor fabs
• Failure analysis: Accurate dopant and resistivity profiling for device troubleshooting
• Research & Development: Profiling of multilayer and compound semiconductor structures

• Characterization: Depth profiling of junctions, transition zones, and multilayer stacks

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• Fully automated measurement cycles with manually automated probe and sample alignment
• Operator-friendly, easy-to-use interface: Expert supervision recommended for evaluation
• Compact Footprint with effective, high-quality vibration and acoustic isolation
• Multipurpose: Suitable for multilayer structures, no thickness limitations
• High resolution: Nanometer scale depth resolution, high spatial accuracy
• In-situ Bevel Angle Measurement (BAM): Standard feature for precise junction depth analysis
• Stand-Alone Bevel sample polishing unit
• Options: PCIV option for wide bandgap and SOI application, which combines variable measurement bias and current-voltage curve analysis to measure spreading resistance profile on novel semiconductor materials
• Iterative PCIV software option (iPCIV): designed to measurehighly variable samples with very high resistance value (ideal below 1E-11 Acurrent range),
• Shallow Layer Measurement (SLM): extending the SRP techniqueto determine thin layer structure,
• Variable Probe Spacing (VPS): motorized probe spacingmovement allows the measurement of sheet resistance of thin isolated layers
  
  • Temperature-controlled measurement chamber (TCM),
  • Signal Tower: standard industrial signal tower which gives information on system status

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Measured parameters:

• Dopant concentration and resistivity on Si materials
• Carrier density and resistivity profile shape
• Resistance profile on compound semiconductors: AlGaAs, GaAs, GaN, Ga₂O₃, InP, SiC
• AlGaN/GaN HEMT structures
• Junction depth
• Transition width
• Sheet resistance
• Electrically activated dose
• Bevel Angle Measurement (BAM)

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