DLS-83D Deep Level Transient Spectroscopy

• Detection and analysis of electrically active defects in semiconductor
• Contamination identification in CMOS imaging and photovoltaics
• Measurement modes includes
  • Temperature and frequency scans
  • Depth profiling
  • Capacitance-voltage (C-V) and current-voltage (I-V)  characterization
  • Capture cross section analysis
  • MOS interface state density measurement
  • Current DLTS (I-DLS) for highly conductive samples

• Minimal maintenance, with optional preventive checks every 3  year
• Lifetime: 10+ years
• Standard 8-year support from Semilab

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• Compact and cost-effective for labs with limited space and budget
• High sensitivity for trace-level defect detection
• Fully featured, out-of-the-box ready
• Part of Semilab’s 30+ year DLTS technology legacy

• Measurement Sensitivity:
  • Detects impurity concentrations below 10^9 atoms/cm³, enabling  trace contaminant identification.

• Operation:
  • Requires destructive sample prep (Schottky and ohmic contacts)
  • Automated evaluation of impurity concentration, activation energy, and capture cross section
• Automation & Control:

• Supports multiple samples
 
• Fully programmable with built-in macro scripting
 
• Graphical user interface (GUI)

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• Bias and pulse voltage range:    ±20 V or ±50 V
• HF Signal:  1MHz @ 100mV
• Sample capacitance:    <1000pF
• Trap sensitivity     1E9 / cm3
• Cryostat selection      
  
  • Bath type LN2  80-450K
  • Automatic LN2  80-800K
  • Tabletop closed cycle He 30-450K
  • Low vibration closed cycle He 30-450K (800K)
• Cryostat:
  
  • Up to 6 probes,
  • LN2 or close cycle He,
  •  Widest temp.range: 30K-800K
  •  Automated temp. control onselected cryostats

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