2013
IEEE Photovoltaic Specialists Conference PVSC), 2013

Single Image Concept for Photoluminescence Based Emitter Saturation Current Imaging Using Direct Calibration by the QSS-μPCD Method

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Abstract

A photoluminescence imaging based technique is introduced which enables the measurement of an emitter saturation current image of a wafer with only a single PL image over an extended range of material parameters. The QSS-μPCD technique is used for recording an independent reference value for a direct J0e calibration. It is shown that for accurate results in an extended J0e and bulk lifetime range, an estimation of bulk lifetime is very useful. It is shown that from the QSS-μPCD Basore-Hansen plot this bulk lifetime value can be reliably estimated. Calculated lifetime related corrections are compared to experimental results showing good agreement. As a potential industrial in-line application, results from a 1D camera based PL setup are presented.

Topic

elemental semiconductors, photoluminescence, Silicon (Si)

Author

F. Korsós, A. Zsóvár, J. Lagowski, M. Wilson, Z. Kiss, Z. Kovács, G. Nádudvari

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