Publications

A. Danel, F. Tardif, G. Kamarinos, M.C. Nguyen

high purity silicon, Surface Charge Profiler (SCP), Doping measurements

A.H. Field

surface charge analysis, VQ, Oxides, contamination, doping, Integrated circuits, Interfaces

Nucl. Inst. Meth. B127-128, 388-392

carrier lifetime, Silicon (Si), Ion Implantation

N.Q. Khanh, P. Tüttő, E.N. Jaroli, O. Buiu, L.P. Bíró, F. Pászti, T. Mohácsy, Cs. Kovacsics, A. Manuaba, J. Gyulai

Charge Carrier Lifetime, Excess Charge Pocket, Ion Implantation, Lifetime Tailoring, Microwave Photoconductive Decay (μ-PCD), Radiation Damage, Recombination Activity

F.A. Stevie, E. Persson, D.K. DeBusk, A. Savchuk, A.M. Hoff, P. Edelman, J. Lagowski

mobil charge, corona temperature stress, SiO2, corona charge

M.W. Goss, A. Findlay

Capacitors, etching, Plasma applications, Plasma devices, Plasma diagnostics, Plasma materials processing, Plasma measurements, Plasma stability, Pulse measurements, Testing

T. Pavelka

T.S. Horányi, P. Tüttő, Cs. Kovacsics

oxidation, Silicon (Si), temperature, nitrogen compounds, oxygen compounds, quartz, surface treatment

A.M. Hoff, T.C. Esry, K. Nauka

plasma damage, dielectric charge, Radiation Damage, heavy metal contamination

J. Lagowski, A. Hofl, L. Jastrzebski, P. Edelman, T. Esry

oxide potential, surface photovoltage, plasma damage, dielectric charge, Radiation Damage, heavy metal contamination

L. Köster, P. Blöchl, L. Fábry

element specific drive-in treatments, Microwave Photoconductive Decay (μ-PCD), metal contamination, injection level, Schockley-Read-Hall-recombination model

P. Roman, I. Kashkoush, R.E. Novak, E. Kamieniecki, J. Ruzyllo

Surface Charge Profiler (SCP), Fe concentration, Si surfaces, Non-Contact Measurement

V. Faifer, P. Edelman, A. Kontkiewicz, J. Lagowski, A. Hoff, V. Dyukov, A. Pravdivtsev, I. Kornienko

surface photovoltage, Minority Carrier Diffusion Length, surface recombination velocity, Silicon (Si)

N.E. Henelius, H. Ronkainen, O.J. Anttila, J.M. Molarius

cleaning technology, semiconductor device manufacturing, electrochemical, electronics, dielectric science

G. Ferenczi, T. Pavelka, P. Tüttő, L. Köster

recombination, Ti donor, Silicon (Si)

T.S. Horányi, T. Pavelka, P. Tüttő

lifetime, Silicon (Si), passivated surface

T.S. Horányi, P. Tüttő

etching, profiling, Silicon (Si)

L. Quattropani, K. Solt, P. Niedermann, I. Maggio-Aprile, O. Fischer, T. Pavelka

Schottky diode, RF plasma treated silicon

L. Jastrzebski, O. Milic, M. Dexter, J. Lagowski, D. DeBusk, K. Nauka, R. Witowski, M. Gordon, E. Persson

contamination, chemical analysis, photovoltaic cells, surface dynamics, integrated circuit design

J. Lagowski, P. Edelman, A.M. Kontkiewicz, O. Milic, W. Henley, M. Dexter, L. Jastrzebski, A.M. Hoff

iron, dissociation, photodissociation, Silicon (Si), diffusion

J. Lagowski, A.M. Kontkiewicz, L. Jastrzebski, P. Edelman

diffusion, Silicon (Si), Surface measurement

T.S. Horányi, P. Tüttő, G. Endrédi

doping profile, Silicon (Si)

T.S. Horányi, P. Tüttő, G. Endrédi

depth profile, multilayer structure

C.A. Londos, T. Pavelka

DLTS, GaAs

D. Huber, P. Eichinger, G. Ferenczi, T. Pavelka, G. Veszely

Microwave transient spectroscopy, deep levels, semiconductor

T. Pavelka and B. Hemm

Microwave Absorption Spectroscopy

T. Pavelka and G. Ferenczi

Thermal emission, deep trap

G. Ferenczi, T. Pavelka, P. Tüttő

contamination analysis, Silicon (Si)

M.C. Nguyen, J.P. Tower, A. Danel

semiconductor materials

S. Dauwe, L. Mittelstadt, A. Lawerenz, H.J. Freitag,C. Beneking, H. Aulich

Fourier transform infrared spectroscopy, Microwave-induced photoconductance decay, Light beam induced current mapping, Spectral Response

F. Pennella, P. Pianezza, E. Tsidikovski, G. Krzych, K. Steeples

CMOS integrated circuits, annealing, Ion Implantation, photovoltaic effects, process control, semiconductor device manufacturing, semiconductor device measurement, voltage measurement, carrier lifetime