Using an improved experimental setup of Microwave Absorption Spectroscopy (MAS) [1] we have been able to considerably extend the temperature range to measure the thermal emission rate and the capture cross section of deep levels. The ability of this technique has demonstrated on the Se° level in n=type Si, where the capture cross section has been measured up to 350 K as compared to the highest temperature 250 K - reported previously [2].
High temperature data are compared with theories describing the temperature dependence of the capture cross section.
