2018
ECS Transactions

Ultra-High Sensitivity Surface Photovoltage Measurement of Heavy Metal Contamination in Silicon Wafers with Fast Metal Identification

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Abstract

Since publishing its first volume in 2006, ECS Transactions (ECST) has been the official conference proceedings publication of The Electrochemical Society. While ECST has successfully disseminated quality content to the scholarly record, the publication has not attracted a large and consistent enough collection of content to publish as full volumes. The ECS Board of Directors and its standing committees, after full and careful consideration over a significant period of time, have made the difficult decision to sunset the publication at the end of 2024. ECST will publish its final volume on September 27, 2024, in connection to its quadrennial PRiME 2024 meeting.

ECS will continue in its unwavering mission to advance theory and practice at the forefront of electrochemical and solid state science, technology, and allied subjects through our strong publication portfolio. Extended abstracts of work people present at ECS meetings will be published via our ECS Meeting Abstract publications. And authors who seek to find a home in the scholarly record for their full manuscripts will still have the opportunity to make a home for their novel research in one of our family of publications: Journal of The Electrochemical Society, ECS Journal of Solid State Science and Technology, ECS Sensors Plus, ECS Advances, and The Electrochemical Society Interface. ECS also plans to continue the ECSarXiv, a free online service for preprints and other preliminary communications not yet published in a peer-reviewed outlet, which facilitates the rapid exchange of ideas in electrochemistry and solid state science and technology.

All previously published content in ECST will remain available to ECS Plus subscribers and those with IOPP transformative agreements that include access to ECS published content.

Topic

contamination, Diffusion Length, heavy metal contamination, Minority Carrier Diffusion Length, Silicon (Si), surface photovoltage, wafer mapping

Author

Marshall Wilson, Alexandre Savtchouk, John D'Amico, Bret Schrayer, Dmitriy Marinskiy, Piotr Edelman, Carlos Almeida, Troy Zajac, Andrew David Findlay, Jacek Lagowski

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