Using a three dimensional representation of data from deep level transient spectroscopy (DLTS) in a parameter space given by temperature, applied sample voltage, and DLTS signal, a method is demonstrated for interpreting a complex set of basic properties of quantum dots. Experimental results on InAs∕GaAs quantum dots are compared with theoretical calculations presented in the same parameter space. From such a comparison, different regimes dominated by charge carrier tunneling and thermal emission and mixture of these can be identified, thus resolving the complex emission data from this kind of systems into its component parts.
