2000
International Symposium on Plasma Process-Induced Damage, 2000

Relationship Between Yield and Reliability Impact of Plasma Damage to Gate Oxide

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Abstract

We report a direct correlation between gate oxide damage measured on antenna testers and yield loss as well as reliability degradation on production chips. The relationship between the magnitude of the yield loss and the reliability failure is explored. We demonstrate, by modeling and by experimental verification, that plasma charging damage can generically cause yield loss and long term reliability degradation but has only minor impact on short-term reliability.

Topic

integrated circuit reliability, integrated circuit yield, Plasma materials processing

Author

P.W. Mason, D.K. DeBusk, J.K. McDaniel, A.S. Oates, K.P. Cheung

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