2024
Nature scientific reports

Radical electron-induced cellulose-semiconductors

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Abstract

Bio-semiconductors are expected to be similar to organic semiconductors; however, they have not been utilized in application yet. In this study, we show the origin of electron appearance, N- and S-type negative resistances, rectification, and switching effects of semiconductors with energy storage capacities of up to 418.5 mJ/m2 using granulated amorphous kenaf cellulose particles (AKCPs). The radical electrons in AKCP at 295 K appear in cellulose via the glycosidic bond C1–O1·–C4. Hall effect measurements indicate an n–type semiconductor with a carrier concentration of 9.89 × 1015/cm3, which corresponds to a mobility of 10.66 cm2/Vs and an electric resistivity of 9.80 × 102 Ωcm at 298 K. The conduction mechanism in the kenaf tissue was modelled from AC impedance curves. The light and flexible cellulose-semiconductors may open up new avenues in soft electronics such as switching effect devices and bio-sensors, primarily because they are composed of renewable natural compounds.

Topic

Hall effect measurements, Materials science, Organic contamination, semiconductor, semiconductor materials, Semiconductor Devices, NANO HARDNESS, PDL Hall

Author

Mikio Fukuhara, Tomonori Yokotsuka, Tetsuo Samoto, Masahiko Kumadaki, Mitsuhiro Takeda, Toshiyuki Hashida

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