We present a novel approach to noncontact dopingmonitoring in wide bandgap semiconductors based on amodification of the corona-charge surface voltage CnCVtechnique. The approach is aimed at acceleration of themeasurement and achieving a throughput of 20 wafers perhour in a typical 12 site measurement pattern. Suchaccelerated measurements (5 times faster compared tocurrent CnCV) are performed with a high precision of 0.1to 0.2%. The key element for increasing the measurementspeed is the development of photo-induced control of thecorona-charge bias in deep depletion that is unique forwide bandgap material. The approach is applicable towide bandgap semiconductors with a bare surface.Specific results demonstrating the novel dopingmeasurement are presented for epitaxial 4H-SiC.
