In this work we present novel photo-assisted characterization of dielectric interfaces in SiC using a modified non-contact corona-Kelvin technique. This technique eliminates the cost and time associated with fabrication of electrical test structures. UV illumination in deep depletion is used to generate minority carriers that empty deep interface states too slow to be emptied by thermal emission. After illumination, the interface state charging current is measured with time resolved voltage decay. This enables novel non-contact corona-Kelvin characterization of hole emission and electron capture processes involving slow interface states. This novel application complements standard corona-Kelvin measurement of dielectric, interface and semiconductor parameters.
