1999
Solid-State Phenomena, Vols. 69-70, pp. 291-294.

Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing

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Abstract

In this paper, we present a study of gettering of uninterntional contamination. The phosphorous ion implanted layer was used as a getter. SPV- and µ-PCD-measurement results indicated that gettering efficiency were related dose of ion implantation. The dose of 5e15 cm-2 was high enough for effective gettering.

Topic

Gettering, Phosphorous Ion Implantation, Silicon (Si), surface photovoltage

Author

M. Yli-Koski, J. Mellin, V. Ovchinnikov

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