FPP-1006

Accurate sheet resistance measurement for thin film semiconductor, TCO, and metal layers
Sample materials: Si, epitaxial layers, metal/implanted layers on Si
Sheet resistance measurement of emitter layers in solar cells

6-electrode contact probe eliminating contact resistance effects
Measurement Principle:
The four point probe (4PP) is a widely used contact technique for monitoring of doping density, resistivity or emitter sheet resistance values. The separation of voltage and current electrodes eliminates the effect of contact resistance from the measurement result. The used voltage is limited so in the high resistivity range the measurable current is getting very small which sets a limitation for the measurement. With our six pin probe (6PP) technique we overcome this problem by using two additional pins to suppress the measurement noise as much as possible.
High measurement accuracy and excellent repeatability.
Absolute reference measurement technique with no need for calibration.
Fast, easy operation with clear graphical user interface.
Durable probe tips with high longevity under normal use.
Versatile: Can handle a wide range of materials including Si wafers, solar cells, metals, TCOs, and other thin film layers.

Sample Compatibility:
- Measures various sample types including semiconductor wafers, bulk silicon, implanted silicon, diffusion layer on silicon sample,
  thin films, metal layers (eg. Al), transparent conductive oxides (TCO), and indium tin oxide (ITO) on glass or silicon substrates.
- Maximum sample size: 210 × 210 mm (M12 PV standard).
- Can measure non-standard wafer sizes.

No items found.

Resistivity Measurement